Solution-processed NO2 gas sensor based on poly(3-hexylthiophene)-doped PbS quantum dots operable at room temperature

Abstract

The global industrial development and increase in the number of transportation vehicles, such as automobiles and ships, have led to a steady increase in the issues related to greenhouse gas emissions. NO 2 is a greenhouse gas emitted in large quantities from automobiles and factories, and its emission is unavoidable in the modern world. Therefore, a sensor capable of precise detection of NO 2 is required. The most commonly reported types of NO 2 sensors are those based on metal oxides. However, their operation at room temperature is impossible owing to their high-temperature operating characteristics, and therefore, a heater must be designed inside or installed outside the sensor for heating. Meanwhile, NO 2 sensors based on PbS quantum dots (QDs) are advantageous as they can operate at room temperature and can be easily manufactured through a solution process rather than a complicated semiconductor process. Herein, a NO 2 sensor was fabricated by doping PbS QDs with poly(3-hexylthiophene) (P3HT). The as-developed sensor exhibited high responsivity to 100-0.4-ppm NO 2 gas with a resolution of 200 ppb owing to the stability of the thin film and high hole mobility of P3HT.

Keywords

Identifiers

DOI

10.1038/s41598-024-71453-9

PubMed

39232056

Journal

Scientific Reports

Year

2024