A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

Abstract

State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage up to 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wide band gap semiconductor devices of GaN switches and SiC diodes are combined to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated half bridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved for the power stage and the complete power converter, without heatsink or airflow. The corresponding power densities are 7.9 W/cm³ and 2.7 W/cm³, based on boxed volumes, respectively.

Key findings

• ▸The proposed power stage uses GaN switches and SiC diodes to achieve high efficiency and power density.
• ▸The power converter has an input voltage up to 380 V and an output power up to 21.3 W.
• ▸The compact isolated half bridge driving circuit is proposed and compared with other isolated driving circuits.

Keywords

Identifiers

DOI

10.24084/repqj16.422

Journal

RE&PQJ

Year

2024