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A high temperature power module using SiC TMOS power switches was developed for extreme environment systems, achieving an on-state current of 1500 A and fast transition times.

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Abstract

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

Key findings

  • The power module is rated > 1200V, > 100A, and > 250 °C.
  • Characterization data demonstrates an on-state current of 1500 A for a full-bridge switch position.
  • Switching waveforms exhibit fast transition times.

Keywords

Power (physics)Power modulePower semiconductor deviceElectrical engineeringOptoelectronicsWide-bandgap semiconductor

Identifiers

DOI
10.4071/hitec-thp22
Journal
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT)
Year
2011